5SHX1445H0002 | ABB | 3BHB003386R0101 High Power IGCT

Product Description

High-Power Integrated Gate-Commutated Thyristor Assembly

The 5SHX1445H0002 (Model: 5SHX1445H0002) is a high-performance Integrated Gate-Commutated Thyristor (IGCT) assembly designed for large-scale power conversion systems. This unit consists of the primary IGCT semiconductor, the 3BHB003386R0101 (Gate Unit), and the 3BHL000387P0101 (Driver Board). By combining the rugged overcurrent capability of a thyristor with the fast, voltage-controlled switching of an IGBT, this module serves as the critical power switching core for medium-voltage drives and HVDC systems. It is engineered to handle massive energy throughput with minimal conduction losses, ensuring the high efficiency required in industrial-scale energy management.

Detailed Technical Specifications

The 5SHX1445H0002 (3BHB003386R0101 / 3BHL000387P0101) assembly is built for extreme reliability in high-voltage environments.

• Manufacturer: ABB

• IGCT Module Model: 5SHX1445H0002

• Gate Unit Part Number: 3BHB003386R0101 (GVC705AE01)

• Driver Board Part Number: 3BHL000387P0101

• Peak Blocking Voltage: 4500 V

• Maximum Turn-Off Current: ~3000 A (System-dependent)

• Chip Technology: SPT++ (Soft Punch-Through) for optimized switching

• Switching Capacity (di/dt): Up to 5 kA/µs

• Junction Temperature: Up to 125°C - 150°C

• Dimensions: 29 cm x 34.5 cm x 6 cm

• Net Weight: 1.58 KG

• Cooling Method: Support for forced air or liquid cooling plates

• Mounting Interface: Specialized press-pack housing for uniform pressure distribution

• Origin: Switzerland / Sweden