IC693MDL753G GE Fanuc Output Module | New & Original Stock
IC693MDL753G GE Fanuc Output Module | New & Original Stock
IC693MDL753G GE Fanuc Output Module | New & Original Stock
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IC693MDL753G GE Fanuc Output Module | New & Original Stock

  • Manufacturer: GE Fanuc

  • Part Number: IC693MDL753G

  • Condition:New with Original Package

  • Product Type: Discrete Output Modules

  • Country of Origin: USA

  • Payment:T/T, Western Union

  • Shipping port: Xiamen

  • Warranty: 12 months

GE Fanuc IC693MDL753G Discrete Sourcing Output Module

Configured for high-density discrete signal execution in Series 90-30 PLC environments, the GE Fanuc IC693MDL753G (IC693MDL753 Discrete Output Module) provides direct physical/electrical execution.

Hardware Specifications

Parameter Specification
Model IC693MDL753G / IC693MDL753
Brand GE Fanuc (Emerson Automation)
Origin USA
Weight 0.26 kg (0.56 lbs)
Dimensions 130.0 mm x 152.0 mm x 140.0 mm (5.12 in x 6.0 in x 5.5 in)
Operating Temp 0 to 60 deg C
Power Consumption +5 VDC @ 260 mA maximum backplane current draw
Output Circuit Type Positive Logic (Sourcing)
Channel Count 32 output points
Group Configuration 4 groups of 8 channels each
Nominal Output Voltage 12 to 24 VDC
Operating Voltage Range 10.2 to 28.8 VDC (+20%, -15%)
Current Rating per Point 0.5 A maximum
Current Rating per Group 3.0 A maximum per group common pin (4.0 A per module max)
Maximum Inrush Current 5.4 A for 20 ms maximum
Output Voltage Drop 0.3 V maximum in the ON state
Maximum Off-State Leakage 1 mA
Logic Response Latency On response: 0.5 ms maximum; Off response: 2.0 ms maximum
Galvanic Isolation 1500 VDC field-to-logic side; 250 VDC between internal groups

I/O Density Scaling and Backplane Bus Communication Velocity

The GE Fanuc IC693MDL753G features 32 positive logic sourcing solid-state outputs to expand physical system capacities during comprehensive I/O density scaling routines. The module utilizes internal optical components to establish a 1500 VDC galvanic isolation barrier between the external field terminals and the standard Series 90-30 backplane bus, with an additional 250 VDC barrier isolating individual channel groups. Digital command signals move over the internal bus architecture matching the primary backplane bus communication velocity, driving internal switching transistors with a maximum ON propagation lag of 0.5 ms to maintain deterministic synchronization with localized control loops.

Frequently Asked Questions

Q: Does this solid-state sourcing module support hot-swap component replacement while the chassis backplane is energized?

A: No. The Series 90-30 infrastructure lacks live insertion and removal mechanisms. Power down the parent rack power supply and isolate all external 12/24 VDC field voltage loops prior to removing or seating the module to prevent electrical damage to the logic-side components.

Q: What are the continuous electrical limitations when routing current through a single channel group?

A: While individual output transistors are rated to conduct up to 0.5 A, the shared internal common pin restricts total current flow to 3.0 A per group. Thermal degradation profiles dictate that total combined power dissipation across all 32 channels must not exceed a cumulative load of 4.0 A per module.

Field Installation Guidelines

  • Baseplate Track Insertion: Isolate all primary grid power. Align the module housing within the vertical mounting slots of the 90-30 baseplate and apply even force until the rear pins connect with the bus back panel. Ensure the lower latch mechanism snaps into position to prevent mechanical shifting.
  • Sourcing Output Common Wiring: Ensure the external 12 to 24 VDC field supply connects securely to the positive bus terminal bar, with the load wired between the individual output terminal and the negative common return. Avoid loose terminations that increase localized circuit resistance.
  • Transient Voltage Mitigation: Install external flyback diodes across inductive load circuits such as continuous DC relay coils or solenoid actuators. This suppression step protects the 0.5 A sourcing transistors from high-voltage inverse inductive spikes during channel switching cycles.
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